RT Journal Article
T1 Diode power probe measurements of wireless signals
A1 Gomes, Hugo
A1 Rodríguez Testera, Alejandro
A1 Carvalho, Nuno Borges
A1 Fernández Barciela, Mónica
A1 Remley, Kate A
K1 3307.08 Dispositivos de Microondas
K1 3307.14 Dispositivos Semiconductores
K1 3307.92 Microelectrónica. Tecnologías III-V y Alternativas
AB In this paper, we conduct a thorough analysis of the nonlinear behavior of diode power probes and demonstrate how memory effects can alter power measurements of signals with wide modulation bandwidths and high values of peak-to-average power ratio. We show analytically, by simulations, and with measurements, that commonly used single-tone calibration procedures for diode power probes can provide erroneous values when measuring modulated signals used in many new wireless standards. We show that high values of peak-to-average-power ratio can degrade the calibration results due to the low-frequency response imposed by the power probe’s baseband circuit impedance. This effect is first theoretically demonstrated by use of a Volterra series, and then validated by simulations and measurements with a diode power probe circuit. This study provides engineers with guidelines for techniques for correction of diode power probe measurements.
PB IEEE Transactions on Microwave Theory and Techniques
SN 00189480
YR 2011
FD 2011-04
LK http://hdl.handle.net/11093/3522
UL http://hdl.handle.net/11093/3522
LA eng
NO IEEE Transactions on Microwave Theory and Techniques, 59(4): 987-997 (2011)
NO Ministerio de ciencia e innovación | Ref. HP2006-0120
DS Investigo
RD 03-dic-2024