RT conferenceObject
T1 Exploiting behavioral modelling formulations for nonlinear analytical circuit design and improved frequency scalability: Bandwidth extension through the admittance domain (Invited paper)
A1 Fernández Barciela, Mónica
A1 Moure Fernández, María del Rocío
A1 Casbon, Michael
A1 Tasker, Paul J
A1 Peláez Pérez, Ana María
A2 IEEE
K1 3307.08 Dispositivos de Microondas
K1 3307.14 Dispositivos Semiconductores
K1 3307.92 Microelectrónica. Tecnologías III-V y Alternativas
AB To meet state-of-the-art specs in nonlinear circuit design for high frequency transceivers, we need computational efficient and reliable active device nonlinear models. Frequencydomain behavioral formulations, like X-parameters, have proven successful in this context. In this paper these formulations are exploited, through simplifications and transformations to the admittance/impedance domains, to algebraically guide the complex nonlinear design flow, in particular, in oscillator design. In addition, analytically the transistor behavioral model bandwidth can be extended, through the enhanced frequency scalability provided by the admittance domain. Simulations and measurements, HEMT and HBT devices will be used to validate the described approaches.
SN 9781509043750
YR 2017
FD 2017-04
LK http://hdl.handle.net/11093/3506
UL http://hdl.handle.net/11093/3506
LA eng
NO info:eu-repo/grantAgreement/MINECO//TEC2014-60283-C3-3-R/ES/NUEVOS MODELOS NO LINEALES COMPORTAMENTALES DE TRANSISTORES Y TECNOLOGIAS DE DISEÑO PARA AMPLIFICADORES DE POTENCIA DE BANDA DUAL PARA DRONES MULTICOPTERO LIGEROS
NO Ministerio de Economía y Competitividad | Ref. TEC2014-60283-C3-3-R
DS Investigo
RD 11-dic-2024