RT conferenceObject
T1 Broadband non-linear FET behavioral model defined in the admittance domain
A1 Moure Fernández, María del Rocío
A1 Fernández Barciela, Mónica
A1 Casbon, Michael
A1 Tasker, Paul J
A2 IEEE
K1 3307.08 Dispositivos de Microondas
K1 3307.14 Dispositivos Semiconductores
K1 3307.92 Microelectrónica. Tecnologías III-V y Alternativas
AB In this paper a broadband non-linear behavioral model, defined in the admittance, Y-parameter, domain rather than the travelling waves, X-parameter, domain, applicable for FETs is presented. This work builds on previous work by incorporating a quadratic dependence of the Large Signal (LS) intrinsic Y-parameters real parts with frequency to extend its bandwidth. Such a model is able to predict large-signal transistor behavior, including the second harmonic, up to close to the device fT. The model has been extracted and validated on WIN GaN HEMT devices.
SN 9782874870446
YR 2016
FD 2016-10
LK http://hdl.handle.net/11093/3505
UL http://hdl.handle.net/11093/3505
LA eng
NO Ministerio de Economía y Competitividad | Ref. TEC2014-60283-C3-3-R
DS Investigo
RD 11-dic-2024