RT conferenceObject
T1 The impact of long-term memory effects on diode power probes
A1 Gomes, Hugo
A1 Rodríguez Testera, Alejandro
A1 Carvalho, Nuno Borges
A1 Fernández Barciela, Mónica
A1 Remley, Kate A
A2 IEEE
K1 3307.08 Dispositivos de Microondas
K1 3307.14 Dispositivos Semiconductores
K1 3307.19 Transistores
AB This paper presents an analysis of long term-memory effects on power measurements with diode power probes. We show that a power probe calibrated with a single-tone sinusoidal excitation can provide erroneous values when used with modulated signals. This fact is ascribed to the low-frequency response imposed by the power probe baseband circuit. This hypothesis is first theoretically demonstrated by use of a Volterra series, and then validated by simulations and measurements using a diode power probe.
SN 9781424460564
YR 2010
FD 2010
LK http://hdl.handle.net/11093/3486
UL http://hdl.handle.net/11093/3486
LA eng
NO Xunta de Galicia | Ref. INCITE08PXIB322241 PR
DS Investigo
RD 11-dic-2024