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Broadband non-linear FET behavioral model defined in the admittance domain

dc.contributor.authorMoure Fernández, María del Rocío 
dc.contributor.authorFernández Barciela, Mónica 
dc.contributor.authorCasbon, Michael
dc.contributor.authorTasker, Paul J
dc.contributor.editorIEEEspa
dc.date.accessioned2022-06-01T08:18:07Z
dc.date.available2022-06-01T08:18:07Z
dc.date.issued2016-10
dc.identifier.isbn9782874870446
dc.identifier.urihttp://hdl.handle.net/11093/3505
dc.description.abstractIn this paper a broadband non-linear behavioral model, defined in the admittance, Y-parameter, domain rather than the travelling waves, X-parameter, domain, applicable for FETs is presented. This work builds on previous work by incorporating a quadratic dependence of the Large Signal (LS) intrinsic Y-parameters real parts with frequency to extend its bandwidth. Such a model is able to predict large-signal transistor behavior, including the second harmonic, up to close to the device fT. The model has been extracted and validated on WIN GaN HEMT devices.spa
dc.description.sponsorshipMinisterio de Economía y Competitividad | Ref. TEC2014-60283-C3-3-Rspa
dc.language.isoengspa
dc.relationinfo:eu-repo/grantAgreement/MINECO//TEC2014-60283-C3-3-R/ES/NUEVOS MODELOS NO LINEALES COMPORTAMENTALES DE TRANSISTORES Y TECNOLOGIAS DE DISEÑO PARA AMPLIFICADORES DE POTENCIA DE BANDA DUAL PARA DRONES MULTICOPTERO LIGEROS
dc.titleBroadband non-linear FET behavioral model defined in the admittance domainen
dc.typeconferenceObjectspa
dc.rights.accessRightsopenAccessspa
dc.identifier.doi10.1109/EuMIC.2016.7777545
dc.identifier.editorhttp://dx.doi.org/10.1109/EuMIC.2016.7777545spa
dc.publisher.departamentoTeoría do sinal e comunicaciónsspa
dc.conferenceObject.typeComunicación extensa internacionalspa
dc.identifier.conferenceObject2016 11th European Microwave Integrated Circuits Conference (EuMIC), London, Reino Unido, 3-4 octubre 2016spa
dc.publisher.grupoinvestigacionGrupo de Dispositivos de Alta Frecuenciaspa
dc.subject.unesco3307.08 Dispositivos de Microondasspa
dc.subject.unesco3307.14 Dispositivos Semiconductoresspa
dc.subject.unesco3307.92 Microelectrónica. Tecnologías III-V y Alternativasspa
dc.date.updated2022-05-24T17:37:45Z
dc.computerCitationpub_title=Broadband non-linear FET behavioral model defined in the admittance domain|volume=undefined|journal_number=|start_pag=281|end_pag=284|congress_title=2016 11th European Microwave Integrated Circuits Conference (EuMIC)|start_date=10/3/2016|end_date=10/4/2016spa
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