Broadband non-linear FET behavioral model defined in the admittance domain
DATA:
2016-10
IDENTIFICADOR UNIVERSAL: http://hdl.handle.net/11093/3505
VERSIÓN EDITADA: http://dx.doi.org/10.1109/EuMIC.2016.7777545
MATERIA UNESCO: 3307.08 Dispositivos de Microondas ; 3307.14 Dispositivos Semiconductores ; 3307.92 Microelectrónica. Tecnologías III-V y Alternativas
TIPO DE DOCUMENTO: conferenceObject
RESUMO
In this paper a broadband non-linear behavioral model, defined in the admittance, Y-parameter, domain rather than the travelling waves, X-parameter, domain, applicable for FETs is presented. This work builds on previous work by incorporating a quadratic dependence of the Large Signal (LS) intrinsic Y-parameters real parts with frequency to extend its bandwidth. Such a model is able to predict large-signal transistor behavior, including the second harmonic, up to close to the device fT. The model has been extracted and validated on WIN GaN HEMT devices.