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The impact of long-term memory effects on diode power probes

dc.contributor.authorGomes, Hugo
dc.contributor.authorRodríguez Testera, Alejandro 
dc.contributor.authorCarvalho, Nuno Borges
dc.contributor.authorFernández Barciela, Mónica 
dc.contributor.authorRemley, Kate A
dc.contributor.editorIEEEspa
dc.date.accessioned2022-05-27T10:44:14Z
dc.date.available2022-05-27T10:44:14Z
dc.date.issued2010
dc.identifier.isbn9781424460564
dc.identifier.urihttp://hdl.handle.net/11093/3486
dc.description.abstractThis paper presents an analysis of long term-memory effects on power measurements with diode power probes. We show that a power probe calibrated with a single-tone sinusoidal excitation can provide erroneous values when used with modulated signals. This fact is ascribed to the low-frequency response imposed by the power probe baseband circuit. This hypothesis is first theoretically demonstrated by use of a Volterra series, and then validated by simulations and measurements using a diode power probe.eng
dc.description.sponsorshipXunta de Galicia | Ref. INCITE08PXIB322241 PRspa
dc.description.sponsorshipMinisterio de Ciencia e Innovación | Ref. TEC2008-06874-C03-02spa
dc.language.isoengeng
dc.relationinfo:eu-repo/grantAgreement/MICINN//TEC2008-06874-C03-02/ES/METODOLOGIA DE DISEÑO OPTIMIZADO DE ARRAYS DE OSCILADORES BI-DIMENSIONALES PARA APLICACIONES DE CONTROL DE APUNTAMIENTO DE ANTENAS ¿PHASED-ARRAY?
dc.titleThe impact of long-term memory effects on diode power probeseng
dc.typeconferenceObjectspa
dc.rights.accessRightsopenAccessspa
dc.identifier.doi10.1109/MWSYM.2010.5514791
dc.identifier.editorhttp://dx.doi.org/10.1109/MWSYM.2010.5514791spa
dc.publisher.departamentoTeoría do sinal e comunicaciónsspa
dc.conferenceObject.typeComunicación extensa internacionalspa
dc.identifier.conferenceObject2010 IEEE/MTT-S International Microwave Symposium - MTT 2010, Anaheim, CA, USA, Estados Unidos, 23-28 mayo 2010spa
dc.publisher.grupoinvestigacionGrupo de Dispositivos de Alta Frecuenciaspa
dc.subject.unesco3307.08 Dispositivos de Microondasspa
dc.subject.unesco3307.14 Dispositivos Semiconductoresspa
dc.subject.unesco3307.19 Transistoresspa
dc.date.updated2022-05-24T18:00:42Z
dc.computerCitationpub_title=The impact of long-term memory effects on diode power probes|volume=undefined|journal_number=|start_pag=596|end_pag=599|congress_title=2010 IEEE/MTT-S International Microwave Symposium - MTT 2010|start_date=5/23/2010|end_date=5/28/2010spa
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