Using X-parameters to model diode-based RF power probes
DATE:
2011
UNIVERSAL IDENTIFIER: http://hdl.handle.net/11093/3485
EDITED VERSION: http://ieeexplore.ieee.org/document/5973230/
UNESCO SUBJECT: 3307.08 Dispositivos de Microondas ; 3307.14 Dispositivos Semiconductores ; 3307.19 Transistores
DOCUMENT TYPE: conferenceObject
ABSTRACT
This paper presents an X-parameter model for diode power probes that can be used for calibration purposes. It will be shown that X-parameters can be applied to diode power probes with significant gains in terms of behavior characterization. This first tentative to apply X-parameters is a step further in the calibration of power probes, when they are excited by modulated signals.